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APT50N60JCU2
ISOTOP(R) Boost chopper
Super Junction MOSFET Power Module
K
VDSS = 600V RDSon = 45m max @ Tj = 25C ID = 52A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features
D
G
* - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
S
* * *
S D
K
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 52 38 130 20 45 290 15 3 1900 Unit V A V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT50N60JCU2 - Rev 2
April, 2008
Tc = 25C
APT50N60JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Min Tj = 25C Tj = 125C 2.1
Typ
VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V
40 3
Max 250 500 45 3.9 100
Unit A m V nA
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff VSD trr Qrr Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VGS = 0V ; VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 49A Inductive Switching (125C) VGS = 10V VBus = 400V ID = 49A RG = 5 Inductive switching @ 25C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 VGS = 0V, IS = - 49A IS = - 49A Tj = 25C VR = 400V Tj = 25C diS/dt = 100A/s Min Typ 7.2 8.5 150 34 51 21 30 100 45 675 520 1100 635 0.9 600 17 1.2 V ns C J J ns nC Max Unit nF
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APT50N60JCU2 - Rev 2
April, 2008
APT50N60JCU2
Chopper diode ratings and characteristics
Symbol VRRM VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Max. Peak Repetitive Reverse Voltage Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min 600 Typ 1.8 2 1.3 Max 2.2 V 100 500 36 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 22 25 160 3 6 35 480 85 920 20 ns A pF Unit V
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min CoolMos Diode 2500 -40
Typ
Max 0.43 1.1 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
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APT50N60JCU2 - Rev 2
April, 2008
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
APT50N60JCU2
Typical Performance Curve
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5
Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 360 320 ID, Drain Current (A) 280 240 200 160 120 80 40 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 ID, DC Drain Current (A) 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VGS=20V Normalized to VGS=10V @ 50A VGS=10V 5V 4.5V 4V VGS=15&10V
Transfert Characteristics 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7
TJ=125C TJ=25C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
6.5V 6V 5.5V
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (C) 150
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APT50N60JCU2 - Rev 2
April, 2008
APT50N60JCU2
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.1 VGS(TH), Threshold Voltage (Normalized) 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Coss C, Capacitance (pF) 10000 Ciss 1000 ID, Drain Current (A) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (C)
Maximum Safe Operating Area
VGS=10V ID= 50A
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C
1 ms 10 ms
1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
VDS=480V
ID=50A TJ=25C
VDS=120V VDS=300V
1000 Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APT50N60JCU2 - Rev 2
April, 2008
APT50N60JCU2
140 120
td(on) and td(off) (ns) Delay Times vs Current 70
td(off) VDS=400V RG=5 TJ=125C L=100H td(on)
Rise and Fall times vs Current 60 tr and tf (ns) 50 40 30 20 10 0 tr
VDS=400V RG=5 TJ=125C L=100H
100 80 60 40 20 0 0 10 20 30 40 50
tf
60 70 80
0
10
20
30
40
50
60
70
80
ID, Drain Current (A) Switching Energy vs Current 2 Switching Energy (mJ) 1.6 1.2 Eoff 0.8 0.4 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=400V RG=5 TJ=125C L=100H
ID, Drain Current (A) Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) 2 1.5 1 0.5 0 0 10 20 30 40 50 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
VDS=400V ID=50A TJ=125C L=100H
Eon
Eoff Eon
Operating Frequency vs Drain Current
ZVS VDS=400V D=50% RG=5 TJ=125C TC=75C
250 Frequency (kHz) 200 150 100 50 0 5
hard switching ZCS
IDR, Reverse Drain Current (A)
300
100
TJ=150C
10
TJ=25C
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
10 15 20 25 30 35 40 45 50 ID, Drain Current (A)
ISOTOP(R) is a registered trademark of ST Microelectronics NV COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT50N60JCU2 - Rev 2
April, 2008

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